PartNumber | MRF5812GR1 | MRF5812LF | MRF5812LF-CP |
Description | RF Bipolar Transistors RF Transistor | RF Bipolar Transistors RF Transistor | RF Bipolar Transistors RF Transistor |
Manufacturer | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. |
Product Category | RF Bipolar Transistors | RF Bipolar Transistors | RF Bipolar Transistors |
RoHS | Y | Y | Y |
Series | MRF5812LF | MRF5812LF | MRF5812LF |
Packaging | Reel | Tube | Bulk |
Brand | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. | Advanced Semiconductor, Inc. |
Product Type | RF Bipolar Transistors | RF Bipolar Transistors | RF Bipolar Transistors |
Factory Pack Quantity | 1000 | 1 | 1 |
Subcategory | Transistors | Transistors | Transistors |
Transistor Type | - | Bipolar | Bipolar |
Technology | - | Si | Si |
Transistor Polarity | - | NPN | NPN |
DC Collector/Base Gain hfe Min | - | 50 | 50 |
Collector Emitter Voltage VCEO Max | - | 15 V | 15 V |
Emitter Base Voltage VEBO | - | 2.5 V | 2.5 V |
Continuous Collector Current | - | 200 mA | 200 mA |
Minimum Operating Temperature | - | - 65 C | - |
Maximum Operating Temperature | - | + 200 C | - |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | SOIC-8 | SO-8 |
Operating Frequency | - | 1 GHz | 5 GHz |
Type | - | RF Bipolar Small Signal | - |
Pd Power Dissipation | - | 1.25 W | 1.25 W |
Unit Weight | - | 0.019048 oz | 0.002610 oz |
Configuration | - | - | - |
Output Power | - | - | - |
Maximum DC Collector Current | - | - | 200 mA |