PartNumber | MRF5S19100HSR5 | MRF5S19060NBR1 | MRF5S19060NR1 |
Description | RF MOSFET Transistors HV5 LDMOS NI780HS | RF MOSFET Transistors 1990MHZ 60W 28V TO272WB4N | RF MOSFET Transistors 1990MHZ 60W 28V TO270WB4N |
Manufacturer | NXP | NXP | NXP |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
RoHS | N | E | E |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Technology | Si | Si | Si |
Vds Drain Source Breakdown Voltage | 65 V | 65 V | 65 V |
Gain | 13.9 dB | 14 dB | 14 dB |
Output Power | 22 W | 12 W | 12 W |
Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | NI-780S-3 | TO-272-4 | TO-270-4 |
Packaging | Reel | Reel | Reel |
Configuration | Single | Single | Single |
Height | 4.32 mm | 2.64 mm | 2.64 mm |
Length | 20.7 mm | 23.67 mm | 17.58 mm |
Operating Frequency | 1.9 GHz to 2 GHz | 1.93 GHz to 1.99 GHz | 1.93 GHz to 1.99 GHz |
Type | RF Power MOSFET | RF Power MOSFET | RF Power MOSFET |
Width | 9.91 mm | 9.07 mm | 9.07 mm |
Brand | NXP / Freescale | NXP / Freescale | NXP / Freescale |
Channel Mode | Enhancement | Enhancement | Enhancement |
Pd Power Dissipation | 269 W | 218.8 W | 218.8 W |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
Factory Pack Quantity | 50 | 500 | 500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Vgs Gate Source Voltage | - 0.5 V, 15 V | - 0.5 V, 15 V | - 0.5 V, 15 V |
Vgs th Gate Source Threshold Voltage | 2.7 V | 3.5 V | 3.5 V |
Unit Weight | 0.167294 oz | 0.067412 oz | 0.058073 oz |
Moisture Sensitive | - | Yes | Yes |
Series | - | - | MRF5S19060N |