PartNumber | MRF652S | MRF6P18190HR5 | MRF6P18190HR6 |
Description | RF Bipolar Transistors RF Transistor | RF MOSFET Transistors HV6 1.8GHZ 44W | RF MOSFET Transistors HV6 1.8GHZ 44W |
Manufacturer | Advanced Semiconductor, Inc. | NXP | NXP |
Product Category | RF Bipolar Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
RoHS | Y | Y | Y |
Transistor Type | Bipolar Power | - | - |
Technology | Si | Si | Si |
Transistor Polarity | NPN | N-Channel | N-Channel |
DC Collector/Base Gain hfe Min | 10 | - | - |
Collector Emitter Voltage VCEO Max | 16 V | - | - |
Emitter Base Voltage VEBO | 4 V | - | - |
Continuous Collector Current | 2 A | - | - |
Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 200 C | + 150 C | + 150 C |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | 249-06 | NI-1230-5 | NI-1230-5 |
Packaging | Tray | Reel | Reel |
Operating Frequency | 512 MHz | 1.8 GHz to 1.88 GHz | 1.8 GHz to 1.88 GHz |
Type | RF Bipolar Power | RF Power MOSFET | RF Power MOSFET |
Brand | Advanced Semiconductor, Inc. | NXP / Freescale | NXP / Freescale |
Pd Power Dissipation | 25 W | 648 W | 648 W |
Product Type | RF Bipolar Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
Subcategory | Transistors | MOSFETs | MOSFETs |
Vds Drain Source Breakdown Voltage | - | 68 V | 68 V |
Gain | - | 15.9 dB | 15.9 dB |
Output Power | - | 44 W | 44 W |
Configuration | - | Dual | Dual |
Height | - | 5.08 mm | 5.08 mm |
Length | - | 41.28 mm | 41.28 mm |
Width | - | 10.29 mm | 10.29 mm |
Channel Mode | - | Enhancement | Enhancement |
Factory Pack Quantity | - | 50 | 150 |
Vgs Gate Source Voltage | - | - 0.5 V, 12 V | - 0.5 V, 12 V |
Vgs th Gate Source Threshold Voltage | - | 3 V | 3 V |
Unit Weight | - | 0.464036 oz | 0.465355 oz |