PartNumber | MRF6S20010GNR1 | MRF6S19140HSR3 | MRF6S19140HSR5 |
Description | RF MOSFET Transistors HV6 2GHZ 10W | RF MOSFET Transistors HV6 28V29W LDMOS NI880HS | RF MOSFET Transistors HV6 28V29W LDMOS NI880HS |
Manufacturer | NXP | NXP | NXP |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
RoHS | E | Y | Y |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Technology | Si | Si | Si |
Vds Drain Source Breakdown Voltage | 68 V | 68 V | 68 V |
Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-270 | NI-880S-3 | NI-880S-3 |
Packaging | Reel | Reel | Reel |
Configuration | Single | Single | Single |
Height | 2.08 mm | 5.08 mm | 5.08 mm |
Length | 9.7 mm | 23.24 mm | 23.24 mm |
Series | MRF6S20010N | MRF6S19140H | - |
Width | 6.15 mm | 13.8 mm | 13.8 mm |
Brand | NXP / Freescale | NXP / Freescale | NXP / Freescale |
Channel Mode | Enhancement | Enhancement | Enhancement |
Moisture Sensitive | Yes | - | - |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
Factory Pack Quantity | 500 | 250 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Vgs Gate Source Voltage | - 0.5 V, 12 V | - 0.5 V, 12 V | - 0.5 V, 12 V |
Part # Aliases | 935313674528 | 935325311128 | - |
Unit Weight | 0.019330 oz | 0.238367 oz | 0.238367 oz |
Gain | - | 16 dB | 16 dB |
Output Power | - | 29 W | 29 W |
Operating Frequency | - | 1.93 GHz to 1.99 GHz | 1.93 GHz to 1.99 GHz |
Type | - | RF Power MOSFET | RF Power MOSFET |
Pd Power Dissipation | - | 52.8 W | 52.8 W |
Vgs th Gate Source Threshold Voltage | - | 3 V | 3 V |