PartNumber | MRF6S18060NR1 | MRF6S18060N | MRF6S18060NBR1 |
Description | RF MOSFET Transistors 1880MHZ 60W | FET RF 68V 1.99GHZ TO272-4 | |
Manufacturer | NXP | - | - |
Product Category | RF MOSFET Transistors | - | - |
RoHS | E | - | - |
Transistor Polarity | N-Channel | - | - |
Technology | Si | - | - |
Vds Drain Source Breakdown Voltage | 68 V | - | - |
Gain | 15 dB | - | - |
Output Power | 60 W | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-270-4 | - | - |
Packaging | Reel | - | - |
Configuration | Single | - | - |
Height | 2.64 mm | - | - |
Length | 17.58 mm | - | - |
Operating Frequency | 1.8 GHz to 2 GHz | - | - |
Series | MRF6S18060N | - | - |
Type | RF Power MOSFET | - | - |
Width | 9.07 mm | - | - |
Brand | NXP / Freescale | - | - |
Channel Mode | Enhancement | - | - |
Moisture Sensitive | Yes | - | - |
Pd Power Dissipation | 21.6 W | - | - |
Product Type | RF MOSFET Transistors | - | - |
Factory Pack Quantity | 500 | - | - |
Subcategory | MOSFETs | - | - |
Vgs Gate Source Voltage | - 0.5 V, 12 V | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Part # Aliases | 935319261528 | - | - |
Unit Weight | 0.058073 oz | - | - |