PartNumber | MRF6S19100HR3 | MRF6S19100HSR5 | MRF6S19100GNR1 |
Description | RF MOSFET Transistors HV6 WCDMA 22W NI780H | RF MOSFET Transistors HV6 WCDMA 22W NI780HS | RF MOSFET Transistors 1990MHZ 22W |
Manufacturer | NXP | NXP | NXP |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
RoHS | Y | Y | E |
Transistor Polarity | N-Channel | N-Channel | - |
Technology | Si | Si | Si |
Vds Drain Source Breakdown Voltage | 68 V | 68 V | - |
Gain | 16.1 dB | 16.1 dB | - |
Output Power | 22 W | 22 W | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | NI-780-3 | NI-780S-3 | - |
Packaging | Reel | Reel | Reel |
Configuration | Single | Single | - |
Height | 4.32 mm | 4.32 mm | - |
Length | 34.16 mm | 20.7 mm | - |
Operating Frequency | 1.93 GHz to 1.99 GHz | 1.93 GHz to 1.99 GHz | - |
Series | MRF6S19100H | - | - |
Type | RF Power MOSFET | RF Power MOSFET | - |
Width | 9.91 mm | 9.91 mm | - |
Brand | NXP / Freescale | NXP / Freescale | NXP / Freescale |
Channel Mode | Enhancement | Enhancement | - |
Pd Power Dissipation | 398 W | 398 W | - |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
Factory Pack Quantity | 250 | 50 | 500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Vgs Gate Source Voltage | - 0.5 V, 12 V | - 0.5 V, 12 V | - |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
Unit Weight | 0.226635 oz | 0.167294 oz | 0.057666 oz |
Moisture Sensitive | - | - | Yes |