PartNumber | MRF6S23100HR5 | MRF6S23100HSR5 | MRF6S23100HR3 |
Description | RF MOSFET Transistors HV6 2.3GHZ 20W | RF MOSFET Transistors HV6 2.3GHZ 20W | RF MOSFET Transistors HV6 2.3GHZ 20W |
Manufacturer | NXP | NXP | NXP |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
RoHS | Y | Y | Y |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Technology | Si | Si | Si |
Vds Drain Source Breakdown Voltage | 68 V | 68 V | 68 V |
Gain | 15.4 dB | 15.4 dB | 15.4 dB |
Output Power | 20 W | 20 W | 20 W |
Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | NI-780-3 | NI-780S-3 | NI-780-3 |
Packaging | Reel | Reel | Reel |
Configuration | Single | Single | Single |
Height | 4.32 mm | 4.32 mm | 4.32 mm |
Length | 34.16 mm | 20.7 mm | 34.16 mm |
Operating Frequency | 2.3 GHz to 2.4 GHz | 2.3 GHz to 2.4 GHz | 2.3 GHz to 2.4 GHz |
Type | RF Power MOSFET | RF Power MOSFET | RF Power MOSFET |
Width | 9.91 mm | 9.91 mm | 9.91 mm |
Brand | NXP / Freescale | NXP / Freescale | NXP / Freescale |
Channel Mode | Enhancement | Enhancement | Enhancement |
Pd Power Dissipation | 330 W | 330 W | 330 W |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
Factory Pack Quantity | 50 | 50 | 250 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Vgs Gate Source Voltage | - 0.5 V, 12 V | - 0.5 V, 12 V | - 0.5 V, 12 V |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 3 V |
Unit Weight | 0.226635 oz | 0.168010 oz | 0.226635 oz |