PartNumber | MRFX035HR5 | MRFX1K80GNR5 | MRFX1K80H-128MHZ |
Description | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 35 W CW over 1.8-512 MHz, 65 V | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V | RF Development Tools 3500W pulse - 2 up - 128MHz |
Manufacturer | NXP | NXP | NXP |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | RF Development Tools |
RoHS | Y | Y | Y |
Transistor Polarity | N-Channel | Dual N-Channel | - |
Technology | Si | Si | - |
Id Continuous Drain Current | 100 mA | 43 A | - |
Vds Drain Source Breakdown Voltage | 193 V | - 500 mV, 179 V | - |
Gain | 24.8 dB | 24.4 dB | - |
Output Power | 35 W | 1.8 kW | - |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Mounting Style | Screw Mount | SMD/SMT | - |
Package / Case | NI-360H-2SB | OM-1230G-4L | - |
Packaging | Reel | Reel | - |
Operating Frequency | 1.8 MHz to 512 MHz | 1.8 MHz to 400 MHz | - |
Series | MRFX035H | MRFX1K80 | MRFX1K80 |
Type | RF Power MOSFET | RF Power MOSFET | RF Power MOSFET |
Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
Number of Channels | 1 Channel | 2 Channel | - |
Pd Power Dissipation | 154 W | 3333 W | - |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | RF Development Tools |
Factory Pack Quantity | 50 | 50 | 1 |
Subcategory | MOSFETs | MOSFETs | Development Tools |
Vgs Gate Source Voltage | - 6 V, 10 V | - 6 V, 10 V | - |
Vgs th Gate Source Threshold Voltage | 1.7 V | 2.1 V | - |
Part # Aliases | 935376627178 | 935362677578 | 935362181598 |
Forward Transconductance Min | - | 44.7 S | - |
Moisture Sensitive | - | Yes | - |