PartNumber | MS1008 | MS1006 | MS1007 |
Description | RF Bipolar Transistors RF Transistor | RF TRANS NPN 55V 30MHZ M135 | RF Bipolar Transistors Comm/Bipolar Transisto |
Manufacturer | Advanced Semiconductor, Inc. | - | Microsemi Corporation |
Product Category | RF Bipolar Transistors | - | Module |
RoHS | Y | - | - |
Transistor Type | Bipolar Power | - | NPN |
Technology | Si | - | - |
Transistor Polarity | NPN | - | - |
DC Collector/Base Gain hfe Min | 15 | - | - |
Collector Emitter Voltage VCEO Max | 55 V | - | - |
Emitter Base Voltage VEBO | 4 V | - | - |
Continuous Collector Current | 10 A | - | - |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Configuration | Single | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | M164 | - | - |
Packaging | Tray | - | Bulk |
Operating Frequency | 30 MHz | - | - |
Type | RF Bipolar Power | - | - |
Brand | Advanced Semiconductor, Inc. | - | - |
Pd Power Dissipation | 233 W | - | - |
Product Type | RF Bipolar Transistors | - | - |
Subcategory | Transistors | - | - |
Series | - | - | - |
Package Case | - | - | M174 |
Mounting Type | - | - | Chassis Mount |
Supplier Device Package | - | - | M174 |
Power Max | - | - | 233W |
Current Collector Ic Max | - | - | 10A |
Voltage Collector Emitter Breakdown Max | - | - | 55V |
DC Current Gain hFE Min Ic Vce | - | - | 18 @ 1.4A, 6V |
Frequency Transition | - | - | 30MHz |
Noise Figure dB Typ f | - | - | - |
Gain | - | - | 14dB |