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| PartNumber | MT29F512G08EBHAFJ4-3ITFES:A | MT29F512G08EBHAFB17A3WC1-FES | MT29F512G08EBHAFJ4-3ITFES:A TR |
| Description | NAND Flash TLC 512G 64GX8 BGA | NAND Flash TLC 512G Die 64GX8 | NAND Flash TLC 512G 64GX8 BGA |
| Manufacturer | Micron Technology | Micron Technology | Micron Technology |
| Product Category | NAND Flash | NAND Flash | NAND Flash |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | VBGA-132 | Die | VBGA-132 |
| Series | MT29F | MT29F | MT29F |
| Memory Size | 512 Gbit | 512 Gbit | 512 Gbit |
| Interface Type | Parallel | Parallel | Parallel |
| Organization | 64 G x 8 | 64 G x 8 | 64 G x 8 |
| Timing Type | Asynchronous | Asynchronous | Asynchronous |
| Data Bus Width | 8 bit | 8 bit | 8 bit |
| Supply Voltage Min | 2.5 V | 2.5 V | 2.5 V |
| Supply Voltage Max | 3.6 V | 3.6 V | 3.6 V |
| Minimum Operating Temperature | - 40 C | 0 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 70 C | + 85 C |
| Packaging | Tray | Tray | Reel |
| Brand | Micron | Micron | Micron |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | NAND Flash | NAND Flash | NAND Flash |
| Factory Pack Quantity | 1120 | 1 | 2000 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Micron |
MT29F512G08EBHAFJ4-3R:A | NAND Flash TLC 512G 64GX8 VBGA | |
| MT29F512G08EBHAFJ4-3R:A TR | NAND Flash TLC 512G 64GX8 VBGA | ||
| MT29F512G08EBHAFJ4-3T:A | NAND Flash TLC 512G 64GX8 VBGA | ||
| MT29F512G08EEHAFJ4-3R:A TR | NAND Flash TLC 512G 64GX8 VBGA DDP | ||
| MT29F512G08EEHAFJ4-3R:A | NAND Flash TLC 512G 64GX8 VBGA DDP | ||
| MT29F512G08EBHBFJ4-R:B | NAND Flash TLC 512G 64GX8 VBGA | ||
| MT29F512G08EECAGJ4-5M:A TR | NAND Flash TLC 512G 64GX8 VBGA DDP | ||
| MT29F512G08EECAGJ4-5M:A | NAND Flash TLC 512G 64GX8 VBGA DDP | ||
| MT29F512G08EBHBFJ4-R:B TR | NAND Flash TLC 512G 64GX8 VBGA | ||
| MT29F512G08EBHAFJ4-3T:A TR | NAND Flash | ||
| MT29F512G08EBHAFJ4-3ITFES:A | NAND Flash TLC 512G 64GX8 BGA | ||
| MT29F512G08EBHAFB17A3WC1-FES | NAND Flash TLC 512G Die 64GX8 | ||
| MT29F512G08EBHAFJ4-3ITFES:A TR | NAND Flash TLC 512G 64GX8 BGA | ||
| MT29F512G08EMCBBJ5-6:B | IC FLASH 512G PARALLEL 167MHZ | ||
| MT29F512G08EECAGJ4-5M:A | TLC 512G 64GX8 VBGA DDP | ||
| MT29F512G08EECAGJ4-5M:A TR | TLC 512G 64GX8 VBGA DDP | ||
| MT29F512G08EEHAFJ4-3R:A | TLC 512G 64GX8 VBGA DDP | ||
| MT29F512G08EEHAFJ4-3R:A TR | IC FLASH 512G PARALLEL 333MHZ | ||
| MT29F512G08EEHAFJ4-3RES:A | TLC 512G 64GX8 VBGA DDP | ||
| MT29F512G08EEHAFJ4-3RES:A TR | IC FLASH 512G PARALLEL 333MHZ | ||
| MT29F512G08EKCBBJ5-6:B | NAND FLASH | ||
| MT29F512G08ELCDBG7-37ES:D TR | IC FLASH 512G PARALLEL 267MHZ | ||
| MT29F512G08EMCBBJ5-10:B | IC FLASH 512G PARALLEL 100MHZ | ||
| MT29F512G08EMCBBJ5-10:B TR | IC FLASH 512G PARALLEL 100MHZ | ||
| MT29F512G08EMCBBJ5-10ES:B TR | IC FLASH 512G PARALLEL 100MHZ | ||
| MT29F512G08EMCBBJ5-6:B.001 | IC FLASH 512G PARALLEL 167MHZ |