 |  | | |
| PartNumber | MT3S111P(TE12L,F) | MT3S111P(TE12LF)CT-ND | MT3S111P(TE12LF)DKR-ND |
| Description | RF Bipolar Transistors RF Bipolar Transistor .1A 1W | ||
| Manufacturer | Toshiba | - | - |
| Product Category | RF Bipolar Transistors | - | - |
| RoHS | Y | - | - |
| Series | MT3S111P | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | SiGe | - | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Collector Emitter Voltage VCEO Max | 6 V | - | - |
| Emitter Base Voltage VEBO | 0.6 V | - | - |
| Continuous Collector Current | 100 mA | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-62-3 | - | - |
| Packaging | Reel | - | - |
| Operating Frequency | 8 GHz | - | - |
| Brand | Toshiba | - | - |
| Maximum DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.001764 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
MT3S111P(TE12L,F) | RF Bipolar Transistors RF Bipolar Transistor .1A 1W | |
| MT3S111P(TE12LF)CT-ND | New and Original | ||
| MT3S111P(TE12LF)DKR-ND | New and Original | ||
| MT3S111P(TE12LF)TR-ND | New and Original |