MUN5235DW1T1G

MUN5235DW1T1G vs MUN5235DW1T1G , DTA113ZC vs MUN5235DW1T1G-CUT TAPE

 
PartNumberMUN5235DW1T1GMUN5235DW1T1G , DTA113ZCMUN5235DW1T1G-CUT TAPE
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationDual--
Transistor PolarityNPN--
Typical Input Resistor2.2 kOhms--
Typical Resistor Ratio0.047--
Mounting StyleSMD/SMT--
Package / CaseSOT-363-6--
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation187 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMUN5235DW1--
PackagingReel--
DC Current Gain hFE Max80 at 5 mA at 10 V--
Height0.9 mm--
Length2 mm--
Width1.25 mm--
BrandON Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000265 oz--
Manufacturer Part # Description RFQ
MUN5235DW1T1G Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN
MUN5235DW1T1G , DTA113ZC New and Original
MUN5235DW1T1G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
MUN5235DW1T1G Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN
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