MUN5312DW1

MUN5312DW1T1G vs MUN5312DW1(12) vs MUN5312DW1T1G , SMBJ6.0

 
PartNumberMUN5312DW1T1GMUN5312DW1(12)MUN5312DW1T1G , SMBJ6.0
DescriptionBipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationDual--
Transistor PolarityNPN, PNP--
Typical Input Resistor22 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSC-88-6--
DC Collector/Base Gain hfe Min60--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation187 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMUN5312DW1--
PackagingReel--
DC Current Gain hFE Max60 at 5 mA at 10 V--
Height0.9 mm--
Length2 mm--
Width1.25 mm--
BrandON Semiconductor--
Number of Channels2 Channel--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000219 oz--
Manufacturer Part # Description RFQ
MUN5312DW1T1G Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP
MUN5312DW1T2G Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP
MUN5312DW1(12) New and Original
MUN5312DW1T1G , SMBJ6.0 New and Original
MUN5312DW1T1G PB-FREE New and Original
MUN5312DW1T2 Bipolar Transistors - Pre-Biased 100mA Complementary
ON Semiconductor
ON Semiconductor
MUN5312DW1T1 Bipolar Transistors - Pre-Biased 100mA Complementary
MUN5312DW1T1 TRANS PREBIAS NPN/PNP SOT363
MUN5312DW1T2G TRANS NPN/PNP PREBIAS SOT363
MUN5312DW1T1G Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP
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