PartNumber | MW6S010GNR1 | MW6S010GNR |
Description | RF MOSFET Transistors HV6 900MHZ 10W | |
Manufacturer | NXP | - |
Product Category | RF MOSFET Transistors | - |
RoHS | E | - |
Transistor Polarity | N-Channel | - |
Technology | Si | - |
Vds Drain Source Breakdown Voltage | 68 V | - |
Gain | 18 dB | - |
Output Power | 10 W | - |
Minimum Operating Temperature | - 65 C | - |
Maximum Operating Temperature | + 150 C | - |
Mounting Style | SMD/SMT | - |
Package / Case | TO-270-2 | - |
Packaging | Reel | - |
Configuration | Single | - |
Height | 2.08 mm | - |
Length | 9.7 mm | - |
Operating Frequency | 1.5 GHz | - |
Series | MW6S010N | - |
Type | RF Power MOSFET | - |
Width | 5.97 mm | - |
Brand | NXP / Freescale | - |
Channel Mode | Enhancement | - |
Moisture Sensitive | Yes | - |
Pd Power Dissipation | 61.4 W | - |
Product Type | RF MOSFET Transistors | - |
Factory Pack Quantity | 500 | - |
Subcategory | MOSFETs | - |
Vgs Gate Source Voltage | 12 V | - |
Vgs th Gate Source Threshold Voltage | 2.3 V | - |
Part # Aliases | 935324159528 | - |
Unit Weight | 0.019330 oz | - |