PartNumber | NDB603AL | NDB6020P | NDB6030PL |
Description | MOSFET | MOSFET P-CH 20V 24A D2PAK | MOSFET P-CH 30V 30A D2PAK |
Manufacturer | ON Semiconductor | Fairchild Semiconductor | NS |
Product Category | MOSFET | FETs - Single | FETs - Single |
RoHS | N | - | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 25 A | - | - |
Rds On Drain Source Resistance | 22 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 50 W | - | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Height | 4.83 mm | - | - |
Length | 10.67 mm | - | - |
Transistor Type | 1 N-Channel | 1 P-Channel | 1 P-Channel |
Width | 9.65 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Fall Time | 80 ns | 70 ns | 52 ns |
Product Type | MOSFET | - | - |
Rise Time | 70 ns | 27 ns | 60 ns |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 90 ns | 120 ns | 50 ns |
Typical Turn On Delay Time | 15 ns | 15 ns | 12.5 ns |
Unit Weight | 0.139332 oz | 0.046296 oz | 0.046296 oz |
Series | - | - | - |
Packaging | - | Digi-ReelR Alternate Packaging | Reel |
Part Aliases | - | NDB6020P_NL | NDB6030PL_NL |
Package Case | - | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-252-3 |
Operating Temperature | - | -65°C ~ 175°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | D2PAK | - |
FET Type | - | MOSFET P-Channel, Metal Oxide | - |
Power Max | - | 60W | - |
Drain to Source Voltage Vdss | - | 20V | - |
Input Capacitance Ciss Vds | - | 1590pF @ 10V | - |
FET Feature | - | Logic Level Gate | - |
Current Continuous Drain Id 25°C | - | 24A (Tc) | - |
Rds On Max Id Vgs | - | 50 mOhm @ 12A, 4.5V | - |
Vgs th Max Id | - | 1V @ 250μA | - |
Gate Charge Qg Vgs | - | 35nC @ 5V | - |
Pd Power Dissipation | - | 60 W | 75 W |
Vgs Gate Source Voltage | - | 8 V | 16 V |
Id Continuous Drain Current | - | 24 A | - 30 A |
Vds Drain Source Breakdown Voltage | - | - 20 V | - 30 V |
Rds On Drain Source Resistance | - | 41 mOhms | 37 mOhms |