PartNumber | NDT451AN | NDT451 | NDT451A |
Description | MOSFET N-Channel FET Enhancement Mode | ||
Manufacturer | ON Semiconductor | FSC | FSC |
Product Category | MOSFET | FETs - Single | FETs - Single |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-223-4 | - | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 7.2 A | - | - |
Rds On Drain Source Resistance | 30 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 3 W | - | - |
Configuration | Single | Single Dual Drain | Single Dual Drain |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Digi-ReelR Alternate Packaging | Digi-ReelR Alternate Packaging |
Height | 1.8 mm | - | - |
Length | 6.5 mm | - | - |
Series | NDT451AN | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Type | MOSFET | - | - |
Width | 3.5 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Forward Transconductance Min | 11 S | - | - |
Fall Time | 10 ns | 10 ns | 10 ns |
Product Type | MOSFET | - | - |
Rise Time | 13 ns | 13 ns | 13 ns |
Factory Pack Quantity | 4000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 29 ns | 29 ns | 29 ns |
Typical Turn On Delay Time | 12 ns | 12 ns | 12 ns |
Part # Aliases | NDT451AN_NL | - | - |
Unit Weight | 0.003951 oz | 0.006632 oz | 0.006632 oz |
Part Aliases | - | NDT451AN_NL | NDT451AN_NL |
Package Case | - | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
Operating Temperature | - | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) |
Mounting Type | - | Surface Mount | Surface Mount |
Supplier Device Package | - | SOT-223-4 | SOT-223-4 |
FET Type | - | MOSFET N-Channel, Metal Oxide | MOSFET N-Channel, Metal Oxide |
Power Max | - | 1.1W | 1.1W |
Drain to Source Voltage Vdss | - | 30V | 30V |
Input Capacitance Ciss Vds | - | 720pF @ 15V | 720pF @ 15V |
FET Feature | - | Standard | Standard |
Current Continuous Drain Id 25°C | - | 7.2A (Ta) | 7.2A (Ta) |
Rds On Max Id Vgs | - | 35 mOhm @ 7.2A, 10V | 35 mOhm @ 7.2A, 10V |
Vgs th Max Id | - | 3V @ 250μA | 3V @ 250μA |
Gate Charge Qg Vgs | - | 30nC @ 10V | 30nC @ 10V |
Pd Power Dissipation | - | 3 W | 3 W |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Id Continuous Drain Current | - | 7.2 A | 7.2 A |
Vds Drain Source Breakdown Voltage | - | 30 V | 30 V |
Rds On Drain Source Resistance | - | 30 mOhms | 30 mOhms |
Forward Transconductance Min | - | 11 S | 11 S |