PartNumber | NE3503M04-A | NE3503M04-T2-A | NE3503M04-T2B-A |
Description | RF JFET Transistors Low Noise HJ FET | FET RF 4V 12GHZ M04 | |
Manufacturer | CEL | NEC | NEC |
Product Category | RF JFET Transistors | RF FETs | IC Chips |
RoHS | Y | - | - |
Transistor Type | HFET | HFET | - |
Technology | GaAs | GaAs | - |
Gain | 12 dB | 12 dB | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 4 V | - | - |
Vgs Gate Source Breakdown Voltage | - 3 V | - | - |
Id Continuous Drain Current | 70 mA | - | - |
Maximum Operating Temperature | + 125 C | + 125 C | - |
Pd Power Dissipation | 125 mW | - | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | FTSMM-4 (M04) | - | - |
Operating Frequency | 12 GHz | 12 GHz | - |
Product | RF JFET | - | - |
Type | GaAs HFET | - | - |
Brand | CEL | - | - |
Forward Transconductance Min | 55 mS | - | - |
Gate Source Cutoff Voltage | - 0.7 V | - | - |
NF Noise Figure | 0.45 dB | - | - |
Product Type | RF JFET Transistors | - | - |
Factory Pack Quantity | 1 | - | - |
Subcategory | Transistors | - | - |
Packaging | - | Reel | - |
Package Case | - | FTSMM-4 (M04) | - |
Pd Power Dissipation | - | 125 mW | - |
Id Continuous Drain Current | - | 70 mA | - |
Vds Drain Source Breakdown Voltage | - | 4 V | - |
Forward Transconductance Min | - | 55 mS | - |
Vgs Gate Source Breakdown Voltage | - | - 3 V | - |
NF Noise Figure | - | 0.45 dB | - |