NE3503M0

NE3503M04-A vs NE3503M04-T2-A vs NE3503M04-T2B-A

 
PartNumberNE3503M04-ANE3503M04-T2-ANE3503M04-T2B-A
DescriptionRF JFET Transistors Low Noise HJ FETFET RF 4V 12GHZ M04
ManufacturerCELNECNEC
Product CategoryRF JFET TransistorsRF FETsIC Chips
RoHSY--
Transistor TypeHFETHFET-
TechnologyGaAsGaAs-
Gain12 dB12 dB-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage4 V--
Vgs Gate Source Breakdown Voltage- 3 V--
Id Continuous Drain Current70 mA--
Maximum Operating Temperature+ 125 C+ 125 C-
Pd Power Dissipation125 mW--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseFTSMM-4 (M04)--
Operating Frequency12 GHz12 GHz-
ProductRF JFET--
TypeGaAs HFET--
BrandCEL--
Forward Transconductance Min55 mS--
Gate Source Cutoff Voltage- 0.7 V--
NF Noise Figure0.45 dB--
Product TypeRF JFET Transistors--
Factory Pack Quantity1--
SubcategoryTransistors--
Packaging-Reel-
Package Case-FTSMM-4 (M04)-
Pd Power Dissipation-125 mW-
Id Continuous Drain Current-70 mA-
Vds Drain Source Breakdown Voltage-4 V-
Forward Transconductance Min-55 mS-
Vgs Gate Source Breakdown Voltage-- 3 V-
NF Noise Figure-0.45 dB-
Manufacturer Part # Description RFQ
CEL
CEL
NE3503M04-A RF JFET Transistors Low Noise HJ FET
NE3503M04-T2-A New and Original
NE3503M04-A RF JFET Transistors Low Noise HJ FET
NE3503M04-T2B-A FET RF 4V 12GHZ M04
NE3503M04T2A New and Original
NE3503M04 New and Original
NE3503M04 V75 New and Original
NE3503M04-T1-A New and Original
NE3503M04-T2 New and Original
NE3503M04-T2 , ELM99501A New and Original
NE3503M04-T2B-A/JT New and Original
NE3503M04-T2B New and Original
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