PartNumber | NE3509M04-T2-A | NE3509M04-T1-A | NE3509M04-T2 |
Description | |||
Manufacturer | NEC | - | - |
Product Category | RF FETs | - | - |
Packaging | Reel | - | - |
Mounting Style | SMD/SMT | - | - |
Package Case | FTSMM-4 (M04) | - | - |
Technology | GaAs | - | - |
Transistor Type | HFET | - | - |
Gain | 17.5 dB | - | - |
Pd Power Dissipation | 150 mW | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Operating Frequency | 2 GHz | - | - |
Id Continuous Drain Current | 60 mA | - | - |
Vds Drain Source Breakdown Voltage | 4 V | - | - |
Transistor Polarity | N-Channel | - | - |
Forward Transconductance Min | 80 mS | - | - |
Vgs Gate Source Breakdown Voltage | - 3 V | - | - |
NF Noise Figure | 0.4 dB | - | - |
P1dB Compression Point | 11 dBm | - | - |