PartNumber | NE5550234-AZ | NE55410GR-T3-AZ | NE55410GR-AZ |
Description | RF MOSFET Transistors Pout 33dBm Gain 23.5dB | RF MOSFET Transistors Silicon Medium Pwr LDMOSFET | RF MOSFET Transistors N-Ch Power LDMOS FET |
Manufacturer | CEL | CEL | CEL |
Product Category | RF MOSFET Transistors | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Packaging | Bulk | Reel | - |
Brand | CEL | - | - |
Product Type | RF MOSFET Transistors | - | - |
Factory Pack Quantity | 1 | - | - |
Subcategory | MOSFETs | - | - |
Type | - | RF Power MOSFET | RF Power MOSFET |
Unit Weight | - | 0.002212 oz | 0.002212 oz |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package Case | - | HTSSOP-16 | HTSSOP-16 |
Gain | - | 13.5 db at 2.14 GHz | 13.5 db at 2.14 GHz |
Output Power | - | 10 W | 10 W |
Pd Power Dissipation | - | 40 W | 40 W |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Operating Frequency | - | 0.1 GHz to 2.6 GHz | 0.1 GHz to 2.6 GHz |
Vgs Gate Source Voltage | - | +/- 7 V | +/- 7 V |
Id Continuous Drain Current | - | 1 A | 1 A |
Vds Drain Source Breakdown Voltage | - | 65 V | 65 V |
Vgs th Gate Source Threshold Voltage | - | 2.8 V | 2.8 V |
Transistor Polarity | - | N-Channel | N-Channel |