PartNumber | NE650103M-A | NE6510179A-EVPW19 | NE6510179A-A |
Description | RF JFET Transistors L&S Band GaAs MESFET | RF Development Tools For NE6510179A-A Power at 1.9 GHz | RF JFET Transistors L&S Band GaAs HJFET |
Manufacturer | CEL | CEL | CEL |
Product Category | RF JFET Transistors | RF Development Tools | RF JFET Transistors |
RoHS | Y | N | Y |
Transistor Type | MESFET | - | HFET |
Technology | GaAs | - | GaAs |
Gain | 11 dB | - | 10 dB |
Vds Drain Source Breakdown Voltage | 15 V | - | 8 V |
Vgs Gate Source Breakdown Voltage | - 7 V | - | - 4 V |
Id Continuous Drain Current | 7 A | - | 2.8 A |
Output Power | 40 dBm | - | 35 dBm |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Pd Power Dissipation | 33 W | - | 15 W |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | 3M | - | 79A |
Packaging | Bulk | - | Bulk |
Operating Frequency | 2.3 GHz | - | 1.9 GHz |
Product | RF JFET | - | RF JFET |
Type | GaAs MESFET | - | GaAs HFET |
Brand | CEL | CEL | CEL |
P1dB Compression Point | 40 dBm | - | 35 dBm |
Product Type | RF JFET Transistors | RF Development Tools | RF JFET Transistors |
Factory Pack Quantity | 1 | - | - |
Subcategory | Transistors | Development Tools | Transistors |
Frequency | - | 1.9 GHz | - |
Transistor Polarity | - | - | N-Channel |