NE6621

NE66219-A vs NE66219-T1-A vs NE66219

 
PartNumberNE66219-ANE66219-T1-ANE66219
DescriptionRF Bipolar Transistors NPN High FrequencyRF Bipolar Transistors NPN High FrequencyRF Bipolar Transistors NPN High Frequency
ManufacturerCELCEL-
Product CategoryRF Bipolar TransistorsTransistors - Bipolar (BJT) - RF-
RoHSY--
Transistor TypeBipolarNPN-
TechnologySiSi-
Transistor PolarityNPNNPN-
Emitter Base Voltage VEBO1.5 V--
Continuous Collector Current0.035 A0.035 A-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
ConfigurationSingleSingle-
Collector Base Voltage VCBO15 V--
DC Current Gain hFE Max60 at 5 mA at 2 V--
Operating Frequency21000 MHz (Typ)21000 MHz (Typ)-
TypeRF Bipolar Small Signal--
BrandCEL--
Pd Power Dissipation115 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity1--
SubcategoryTransistors--
Series---
Packaging-Tape & Reel (TR) Alternate Packaging-
Part Aliases-2SC5606-T1-A-
Mounting Style-SMD/SMT-
Package Case-SOT-523-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-523-
Power Max-115mW-
Current Collector Ic Max-35mA-
Voltage Collector Emitter Breakdown Max-3.3V-
DC Current Gain hFE Min Ic Vce-60 @ 5mA, 2V-
Frequency Transition-21GHz-
Noise Figure dB Typ f-1.2dB @ 2GHz-
Gain-14dB-
Pd Power Dissipation-115 mW-
Emitter Base Voltage VEBO-1.5 V-
Manufacturer Part # Description RFQ
CEL
CEL
NE66219-A RF Bipolar Transistors NPN High Frequency
NE66219-T1-A RF Bipolar Transistors NPN High Frequency
NE66219-A RF Bipolar Transistors NPN High Frequency
NE66219 RF Bipolar Transistors NPN High Frequency
NE66219-T1-A/UA New and Original
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