PartNumber | NE66219-A | NE66219-T1-A | NE66219 |
Description | RF Bipolar Transistors NPN High Frequency | RF Bipolar Transistors NPN High Frequency | RF Bipolar Transistors NPN High Frequency |
Manufacturer | CEL | CEL | - |
Product Category | RF Bipolar Transistors | Transistors - Bipolar (BJT) - RF | - |
RoHS | Y | - | - |
Transistor Type | Bipolar | NPN | - |
Technology | Si | Si | - |
Transistor Polarity | NPN | NPN | - |
Emitter Base Voltage VEBO | 1.5 V | - | - |
Continuous Collector Current | 0.035 A | 0.035 A | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Configuration | Single | Single | - |
Collector Base Voltage VCBO | 15 V | - | - |
DC Current Gain hFE Max | 60 at 5 mA at 2 V | - | - |
Operating Frequency | 21000 MHz (Typ) | 21000 MHz (Typ) | - |
Type | RF Bipolar Small Signal | - | - |
Brand | CEL | - | - |
Pd Power Dissipation | 115 mW | - | - |
Product Type | RF Bipolar Transistors | - | - |
Factory Pack Quantity | 1 | - | - |
Subcategory | Transistors | - | - |
Series | - | - | - |
Packaging | - | Tape & Reel (TR) Alternate Packaging | - |
Part Aliases | - | 2SC5606-T1-A | - |
Mounting Style | - | SMD/SMT | - |
Package Case | - | SOT-523 | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | SOT-523 | - |
Power Max | - | 115mW | - |
Current Collector Ic Max | - | 35mA | - |
Voltage Collector Emitter Breakdown Max | - | 3.3V | - |
DC Current Gain hFE Min Ic Vce | - | 60 @ 5mA, 2V | - |
Frequency Transition | - | 21GHz | - |
Noise Figure dB Typ f | - | 1.2dB @ 2GHz | - |
Gain | - | 14dB | - |
Pd Power Dissipation | - | 115 mW | - |
Emitter Base Voltage VEBO | - | 1.5 V | - |