PartNumber | NE662M04-EVGA09 | NE662M04-A | NE662M04-EVGA09-A |
Description | RF Development Tools For NE662M04-A Gain at 900 MHz | RF Bipolar Transistors NPN High Frequency | EVAL BOARD FOR NE662M04 900MHZ |
Manufacturer | CEL | CEL | CEL |
Product Category | RF Development Tools | Transistors - Bipolar (BJT) - RF | RF Evaluation and Development Kits, Boards |
RoHS | N | - | - |
Brand | CEL | - | - |
Product Type | RF Development Tools | - | - |
Factory Pack Quantity | 1 | - | - |
Subcategory | Development Tools | - | - |
Series | - | - | - |
Packaging | - | Bulk Alternate Packaging | - |
Mounting Style | - | SMD/SMT | - |
Package Case | - | SOT-343F | - |
Technology | - | Si | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | SOT-343F | - |
Configuration | - | Single | - |
Power Max | - | 115mW | - |
Transistor Type | - | NPN | - |
Current Collector Ic Max | - | 35mA | - |
Voltage Collector Emitter Breakdown Max | - | 3.3V | - |
DC Current Gain hFE Min Ic Vce | - | 50 @ 5mA, 2V | - |
Frequency Transition | - | 25GHz | - |
Noise Figure dB Typ f | - | 1.1dB @ 2GHz | - |
Gain | - | 18dB | - |
Pd Power Dissipation | - | 0.115 W | - |
Operating Frequency | - | 25 GHz | - |
Collector Emitter Voltage VCEO Max | - | 3.3 V | - |
Transistor Polarity | - | NPN | - |
Emitter Base Voltage VEBO | - | 1.5 V | - |
Continuous Collector Current | - | 0.035 A | - |
DC Collector Base Gain hfe Min | - | 70 | - |
For Use With Related Products | - | - | NE662M04 |
Type | - | - | Transistor |
Frequency | - | - | 900MHz |
Supplied Contents | - | - | Board |