NE6853

NE68539-A vs NE68539-T1-A vs NE68530-T1

 
PartNumberNE68539-ANE68539-T1-ANE68530-T1
DescriptionRF Bipolar Transistors NPN High FrequencyRF Bipolar Transistors NPN High FrequencyRF TRANS NPN 6V 12GHZ SOT323
ManufacturerCELCEL-
Product CategoryRF Bipolar TransistorsTransistors - Bipolar (BJT) - RF-
RoHSY--
Transistor TypeBipolarNPN-
TechnologySiSi-
Transistor PolarityNPNNPN-
Collector Emitter Voltage VCEO Max6 V--
Emitter Base Voltage VEBO2 V--
Continuous Collector Current30 mA--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
ConfigurationSingleSingle-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-143--
DC Current Gain hFE Max150--
TypeRF Bipolar Small Signal--
BrandCEL--
Gain Bandwidth Product fT12 GHz--
Pd Power Dissipation180 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity1--
SubcategoryTransistors--
Series---
Packaging-Tape & Reel (TR) Alternate Packaging-
Part Aliases-2SC4957-T1-A-
Package Case-TO-253-4, TO-253AA-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-143-
Power Max-180mW-
Current Collector Ic Max-30mA-
Voltage Collector Emitter Breakdown Max-6V-
DC Current Gain hFE Min Ic Vce-75 @ 10mA, 3V-
Frequency Transition-12GHz-
Noise Figure dB Typ f-1.5dB @ 2GHz-
Gain-11dB-
Pd Power Dissipation-180 mW-
Manufacturer Part # Description RFQ
CEL
CEL
NE68539-A RF Bipolar Transistors NPN High Frequency
NE68539-T1-A RF Bipolar Transistors NPN High Frequency
NE68539-A RF Bipolar Transistors NPN High Frequency
NE68530-T1 RF TRANS NPN 6V 12GHZ SOT323
NE68530 RF Bipolar Transistors
NE68533 RF Bipolar Transistors NPN High Frequency
NE68533-T1 RF Bipolar Transistors NPN High Frequency
NE68539E New and Original
NE68539E-T1 New and Original
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