 |  | | |
| PartNumber | NE856M02-AZ | NE856M02 | NE856M02-T1 |
| Description | RF Bipolar Transistors NPN Low Distort Amp | RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT | |
| Manufacturer | CEL | CEL | CEL |
| Product Category | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF | Transistors - Bipolar (BJT) - RF |
| Series | - | - | - |
| Packaging | Bulk Alternate Packaging | Bulk Alternate Packaging | Digi-ReelR Alternate Packaging |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package Case | TO-243AA | TO-243AA | TO-243AA |
| Technology | Si | Si | Si |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | SOT-89 | SOT-89 | SOT-89 |
| Configuration | Single | Single | Single |
| Power Max | 1.2W | 1.2W | 1.2W |
| Transistor Type | NPN | NPN | NPN |
| Current Collector Ic Max | 100mA | 100mA | 100mA |
| Voltage Collector Emitter Breakdown Max | 12V | 12V | 12V |
| DC Current Gain hFE Min Ic Vce | 50 @ 20mA, 10V | 50 @ 20mA, 10V | 50 @ 20mA, 10V |
| Frequency Transition | 6.5GHz | 6.5GHz | 6.5GHz |
| Noise Figure dB Typ f | 1.1dB @ 1GHz | 1.1dB @ 1GHz | 1.1dB @ 1GHz |
| Gain | 12dB | 12dB | 12dB |
| Pd Power Dissipation | 1.2 W | 1.2 W | - |
| Collector Emitter Voltage VCEO Max | 12 V | 12 V | - |
| Transistor Polarity | NPN | NPN | NPN |
| Emitter Base Voltage VEBO | 3 V | 3 V | - |
| Continuous Collector Current | 0.1 A | 0.1 A | 0.1 A |
| DC Collector Base Gain hfe Min | 250 | 250 | 250 |
| Part Aliases | - | - | 2SC5336-T1-AZ |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
CEL |
NE856M03-A | RF Bipolar Transistors NPN Lo-Noise Hi-Gain | |
| NE856M02-AZ | RF Bipolar Transistors NPN Low Distort Amp | ||
| NE856M02-T1-AZ | RF Bipolar Transistors NPN Low Distort Amp | ||
| NE856M13 | RF Bipolar Transistors NPN Lo-Noise Hi-Gain | ||
| NE856M02 | RF SMALL SIGNAL TRANSISTOR BIPOLAR/HBT | ||
| NE856M02-T1 | New and Original | ||
| NE856M02-T1-A | New and Original | ||
| NE856M02-T1-AZ/RF | New and Original |