NGTB20N120IHR

NGTB20N120IHRWG vs NGTB20N120IHR vs NGTB20N120IHRW

 
PartNumberNGTB20N120IHRWGNGTB20N120IHRNGTB20N120IHRW
DescriptionIGBT Transistors 1200V/20A RC IGBT FSII
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.1 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C40 A--
Pd Power Dissipation384 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
SeriesNGTB20N120IHR--
PackagingTube--
BrandON Semiconductor--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity30--
SubcategoryIGBTs--
Unit Weight0.229281 oz--
Manufacturer Part # Description RFQ
NGTB20N120IHRWG IGBT Transistors 1200V/20A RC IGBT FSII
NGTB20N120IHR New and Original
NGTB20N120IHRW New and Original
ON Semiconductor
ON Semiconductor
NGTB20N120IHRWG IGBT Transistors 1200V/20A RC IGBT FSII
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