PartNumber | NGTB20N120IHRWG | NGTB20N120IHR | NGTB20N120IHRW |
Description | IGBT Transistors 1200V/20A RC IGBT FSII | ||
Manufacturer | ON Semiconductor | - | - |
Product Category | IGBT Transistors | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | TO-247 | - | - |
Mounting Style | Through Hole | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 1200 V | - | - |
Collector Emitter Saturation Voltage | 2.1 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Continuous Collector Current at 25 C | 40 A | - | - |
Pd Power Dissipation | 384 W | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Series | NGTB20N120IHR | - | - |
Packaging | Tube | - | - |
Brand | ON Semiconductor | - | - |
Gate Emitter Leakage Current | 100 nA | - | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 30 | - | - |
Subcategory | IGBTs | - | - |
Unit Weight | 0.229281 oz | - | - |