NGTB40N120FL2

NGTB40N120FL2WG vs NGTB40N120FL2WAG vs NGTB40N120FL2

 
PartNumberNGTB40N120FL2WGNGTB40N120FL2WAGNGTB40N120FL2
DescriptionIGBT Transistors 1200V/40A FAST IGBT FSIIIGBT Transistors 1200V/40 FAST IGBT FSII T
ManufacturerON SemiconductorON Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247TO-247-4-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1200 V1200 V-
Collector Emitter Saturation Voltage2 V--
Maximum Gate Emitter Voltage30 V30 V-
Continuous Collector Current at 25 C80 A160 A-
Pd Power Dissipation535 W268 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesNGTB40N120FL2--
PackagingTubeTube-
BrandON SemiconductorON Semiconductor-
Gate Emitter Leakage Current200 nA200 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Unit Weight0.229281 oz0.211644 oz-
Continuous Collector Current Ic Max-160 A-
Height-21 mm-
Length-16.13 mm-
Operating Temperature Range-- 55 c to + 175 C-
Width-5.21 mm-
Continuous Collector Current-40 A-
Manufacturer Part # Description RFQ
NGTB40N120FL2WG IGBT Transistors 1200V/40A FAST IGBT FSII
NGTB40N120FL2WAG IGBT Transistors 1200V/40 FAST IGBT FSII T
NGTB40N120FL2 New and Original
NGTB40N120FL2WG PB-FREE New and Original
ON Semiconductor
ON Semiconductor
NGTB40N120FL2WG IGBT Transistors 1200V/40A FAST IGBT FSII
NGTB40N120FL2WAG IGBT FIELD STOP 1200V TO247-4
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