PartNumber | NGTB50N120FL2WAG | NGTB50N120FL2WG 50N120FL2 | NGTB50N120FL2WG 50N120F |
Description | IGBT Transistors 1200V/50 FAST IGBT FSII T | ||
Manufacturer | ON Semiconductor | - | - |
Product Category | IGBT Transistors | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | TO-247-4 | - | - |
Mounting Style | Through Hole | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 1200 V | - | - |
Collector Emitter Saturation Voltage | 2.8 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Continuous Collector Current at 25 C | 200 A | - | - |
Pd Power Dissipation | 536 W | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Series | NGTB50N120FL2WA | - | - |
Packaging | Tube | - | - |
Continuous Collector Current Ic Max | 50 A | - | - |
Brand | ON Semiconductor | - | - |
Gate Emitter Leakage Current | 200 nA | - | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 30 | - | - |
Subcategory | IGBTs | - | - |
Unit Weight | 0.211644 oz | - | - |