NJT4030PT1

NJT4030PT1G vs NJT4030PT1G , EUP8020E-J vs NJT4030PT1G 4030P SOT223

 
PartNumberNJT4030PT1GNJT4030PT1G , EUP8020E-JNJT4030PT1G 4030P SOT223
DescriptionBipolar Transistors - BJT 40V 3A PNP BIPOLAR POWER TRANSISTOR
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max40 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO6 V--
Maximum DC Collector Current6 A--
Gain Bandwidth Product fT160 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesNJT4030P--
Height1.57 mm--
Length6.5 mm--
PackagingReel--
Width3.5 mm--
BrandON Semiconductor--
DC Collector/Base Gain hfe Min200--
Pd Power Dissipation2000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz--
Manufacturer Part # Description RFQ
NJT4030PT1G Bipolar Transistors - BJT 40V 3A PNP BIPOLAR POWER TRANSISTOR
NJT4030PT1G , EUP8020E-J New and Original
NJT4030PT1G 4030P SOT223 New and Original
NJT4030PT1G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
NJT4030PT1G Bipolar Transistors - BJT 40V 3A PNP BIPOLAR POWER TRANSISTOR
Top