PartNumber | NJV4030PT1G | NJV4030PT3G | NJV4030PT1GONSEMI |
Description | Bipolar Transistors - BJT PNP SOT223 BIP PWR TRAN | Bipolar Transistors - BJT PNP SOT223 BIP PWR TRAN | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-223-4 | SOT-223-4 | - |
Transistor Polarity | PNP | PNP | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 40 V | 40 V | - |
Collector Base Voltage VCBO | 40 V | 40 V | - |
Emitter Base Voltage VEBO | 6 V | 6 V | - |
Collector Emitter Saturation Voltage | 0.5 V | 150 mV | - |
Maximum DC Collector Current | 5 A | 5 A | - |
Gain Bandwidth Product fT | 160 MHz | 160 MHz | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | NJT4030P | NJT4030P | - |
DC Current Gain hFE Max | 400 at 1 A, 1 V | 400 at 1 A, 1 VDC | - |
Packaging | Reel | Reel | - |
Brand | ON Semiconductor | ON Semiconductor | - |
DC Collector/Base Gain hfe Min | 200 at 1 A, 1 V | 200 at 1 A, 1 VDC | - |
Pd Power Dissipation | 2 W | 2 W | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Factory Pack Quantity | 1000 | 4000 | - |
Subcategory | Transistors | Transistors | - |
Unit Weight | 0.003951 oz | - | - |
Continuous Collector Current | - | 3 A | - |