PartNumber | NJVMJB42CT4G | NJVMJB41CT4G | NJVMJB41C |
Description | Bipolar Transistors - BJT BIP PNP 6A 100V TR | Bipolar Transistors - BJT BIP NPN 6A 100V TR | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | Y | Y | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | D2PAK-3 | D2PAK-3 | - |
Transistor Polarity | PNP | NPN | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | - 100 V | 100 V | - |
Collector Base Voltage VCBO | - 100 V | 100 V | - |
Emitter Base Voltage VEBO | - 5 V | 5 V | - |
Collector Emitter Saturation Voltage | - 1.5 V | 1.5 V | - |
Maximum DC Collector Current | - 10 A | 6 A | - |
Gain Bandwidth Product fT | 3 MHz | 3 MHz | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | MJB42C | MJB41C | - |
DC Current Gain hFE Max | 75 | 75 at 3 A, 4 V | - |
Packaging | Reel | Reel | - |
Brand | ON Semiconductor | ON Semiconductor | - |
Continuous Collector Current | - 6 A | - | - |
DC Collector/Base Gain hfe Min | 15 | 20 at 500 mA, 10 V | - |
Pd Power Dissipation | 65 W | 65 W | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Factory Pack Quantity | 800 | 800 | - |
Subcategory | Transistors | Transistors | - |
Unit Weight | 0.050089 oz | 0.079014 oz | - |
Technology | - | Si | - |