NJVMJD42

NJVMJD42CRLG vs NJVMJD42CT4G vs NJVMJD42CT4

 
PartNumberNJVMJD42CRLGNJVMJD42CT4GNJVMJD42CT4
DescriptionBipolar Transistors - BJT BIP DPAK PNP 6A 100V TRBipolar Transistors - BJT SILICON Pwr TRANSISTORTrans GP BJT PNP 100V 6A Automotive 3-Pin(2+Tab) DPAK T/R
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors - Bipolar (BJT) - RF
RoHSYY-
SeriesMJD42CMJD42CMJD42C
PackagingReelReelReel
BrandON SemiconductorON Semiconductor-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
QualificationAEC-Q101AEC-Q101-
Factory Pack Quantity18002500-
SubcategoryTransistorsTransistors-
Mounting Style-SMD/SMTSMD/SMT
Package / Case-DPAK-3-
Transistor Polarity-PNPPNP
Configuration-SingleSingle
Collector Emitter Voltage VCEO Max-100 V-
Collector Base Voltage VCBO-100 V-
Emitter Base Voltage VEBO-5 V-
Maximum DC Collector Current-6 A6 A
Gain Bandwidth Product fT-3 MHz3 MHz
Minimum Operating Temperature-- 65 C- 65 C
Maximum Operating Temperature-+ 150 C+ 150 C
DC Current Gain hFE Max-30 at 300 mA, 4 V30 at 0.3 A at 4 V
Height-2.38 mm-
Length-6.73 mm-
Width-6.22 mm-
DC Collector/Base Gain hfe Min-30-
Pd Power Dissipation-1750 mW-
Part # Aliases-NJVMJD42CT4G-VF01-
Unit Weight-0.012346 oz0.012346 oz
Package Case--DPAK-3
Pd Power Dissipation--1750 mW
Collector Emitter Voltage VCEO Max--100 V
Collector Base Voltage VCBO--100 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--30
Manufacturer Part # Description RFQ
NJVMJD42CRLG Bipolar Transistors - BJT BIP DPAK PNP 6A 100V TR
NJVMJD42CT4G Bipolar Transistors - BJT SILICON Pwr TRANSISTOR
NJVMJD42CT4 Trans GP BJT PNP 100V 6A Automotive 3-Pin(2+Tab) DPAK T/R
NJVMJD42CT4G/MJD41C New and Original
NJVMJD42CT4G Bipolar Transistors - BJT SILICON Pwr TRANSISTOR
ON Semiconductor
ON Semiconductor
NJVMJD42CRLG TRANS PNP 100V 6A DPAK-4
NJVMJD42CT4G-VF01 TRANS PNP 100V 6A DPAK-4
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