PartNumber | NJVMJD42CRLG | NJVMJD42CT4G | NJVMJD42CT4 |
Description | Bipolar Transistors - BJT BIP DPAK PNP 6A 100V TR | Bipolar Transistors - BJT SILICON Pwr TRANSISTOR | Trans GP BJT PNP 100V 6A Automotive 3-Pin(2+Tab) DPAK T/R |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF |
RoHS | Y | Y | - |
Series | MJD42C | MJD42C | MJD42C |
Packaging | Reel | Reel | Reel |
Brand | ON Semiconductor | ON Semiconductor | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Qualification | AEC-Q101 | AEC-Q101 | - |
Factory Pack Quantity | 1800 | 2500 | - |
Subcategory | Transistors | Transistors | - |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | DPAK-3 | - |
Transistor Polarity | - | PNP | PNP |
Configuration | - | Single | Single |
Collector Emitter Voltage VCEO Max | - | 100 V | - |
Collector Base Voltage VCBO | - | 100 V | - |
Emitter Base Voltage VEBO | - | 5 V | - |
Maximum DC Collector Current | - | 6 A | 6 A |
Gain Bandwidth Product fT | - | 3 MHz | 3 MHz |
Minimum Operating Temperature | - | - 65 C | - 65 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
DC Current Gain hFE Max | - | 30 at 300 mA, 4 V | 30 at 0.3 A at 4 V |
Height | - | 2.38 mm | - |
Length | - | 6.73 mm | - |
Width | - | 6.22 mm | - |
DC Collector/Base Gain hfe Min | - | 30 | - |
Pd Power Dissipation | - | 1750 mW | - |
Part # Aliases | - | NJVMJD42CT4G-VF01 | - |
Unit Weight | - | 0.012346 oz | 0.012346 oz |
Package Case | - | - | DPAK-3 |
Pd Power Dissipation | - | - | 1750 mW |
Collector Emitter Voltage VCEO Max | - | - | 100 V |
Collector Base Voltage VCBO | - | - | 100 V |
Emitter Base Voltage VEBO | - | - | 5 V |
DC Collector Base Gain hfe Min | - | - | 30 |