PartNumber | NJVMJD42CT4G | NJVMJD42CT4 | NJVMJD42CT4G/MJD41C |
Description | Bipolar Transistors - BJT SILICON Pwr TRANSISTOR | Trans GP BJT PNP 100V 6A Automotive 3-Pin(2+Tab) DPAK T/R | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | Bipolar Transistors - BJT | Transistors - Bipolar (BJT) - RF | - |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | DPAK-3 | - | - |
Transistor Polarity | PNP | PNP | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 100 V | - | - |
Collector Base Voltage VCBO | 100 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Maximum DC Collector Current | 6 A | 6 A | - |
Gain Bandwidth Product fT | 3 MHz | 3 MHz | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | MJD42C | MJD42C | - |
DC Current Gain hFE Max | 30 at 300 mA, 4 V | 30 at 0.3 A at 4 V | - |
Height | 2.38 mm | - | - |
Length | 6.73 mm | - | - |
Packaging | Reel | Reel | - |
Width | 6.22 mm | - | - |
Brand | ON Semiconductor | - | - |
DC Collector/Base Gain hfe Min | 30 | - | - |
Pd Power Dissipation | 1750 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Qualification | AEC-Q101 | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | Transistors | - | - |
Part # Aliases | NJVMJD42CT4G-VF01 | - | - |
Unit Weight | 0.012346 oz | 0.012346 oz | - |
Package Case | - | DPAK-3 | - |
Pd Power Dissipation | - | 1750 mW | - |
Collector Emitter Voltage VCEO Max | - | 100 V | - |
Collector Base Voltage VCBO | - | 100 V | - |
Emitter Base Voltage VEBO | - | 5 V | - |
DC Collector Base Gain hfe Min | - | 30 | - |