NJVMJD42CT

NJVMJD42CT4G vs NJVMJD42CT4 vs NJVMJD42CT4G/MJD41C

 
PartNumberNJVMJD42CT4GNJVMJD42CT4NJVMJD42CT4G/MJD41C
DescriptionBipolar Transistors - BJT SILICON Pwr TRANSISTORTrans GP BJT PNP 100V 6A Automotive 3-Pin(2+Tab) DPAK T/R
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors - Bipolar (BJT) - RF-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDPAK-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max100 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current6 A6 A-
Gain Bandwidth Product fT3 MHz3 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMJD42CMJD42C-
DC Current Gain hFE Max30 at 300 mA, 4 V30 at 0.3 A at 4 V-
Height2.38 mm--
Length6.73 mm--
PackagingReelReel-
Width6.22 mm--
BrandON Semiconductor--
DC Collector/Base Gain hfe Min30--
Pd Power Dissipation1750 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity2500--
SubcategoryTransistors--
Part # AliasesNJVMJD42CT4G-VF01--
Unit Weight0.012346 oz0.012346 oz-
Package Case-DPAK-3-
Pd Power Dissipation-1750 mW-
Collector Emitter Voltage VCEO Max-100 V-
Collector Base Voltage VCBO-100 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-30-
Manufacturer Part # Description RFQ
NJVMJD42CT4G Bipolar Transistors - BJT SILICON Pwr TRANSISTOR
NJVMJD42CT4 Trans GP BJT PNP 100V 6A Automotive 3-Pin(2+Tab) DPAK T/R
NJVMJD42CT4G/MJD41C New and Original
NJVMJD42CT4G Bipolar Transistors - BJT SILICON Pwr TRANSISTOR
ON Semiconductor
ON Semiconductor
NJVMJD42CT4G-VF01 TRANS PNP 100V 6A DPAK-4
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