NJW1302

NJW1302G vs NJW1302 NJW3281 vs NJW1302G/3281G

 
PartNumberNJW1302GNJW1302 NJW3281NJW1302G/3281G
DescriptionBipolar Transistors - BJT 200W TO-3P PNP
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-3P-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max250 V--
Collector Base Voltage VCBO250 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.4 V--
Maximum DC Collector Current15 A--
Gain Bandwidth Product fT30 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesNJW1302--
DC Current Gain hFE Max75--
Height18.7 mm--
Length15.6 mm--
PackagingTube--
Width4.8 mm--
BrandON Semiconductor--
Continuous Collector Current15 ADC--
DC Collector/Base Gain hfe Min75--
Pd Power Dissipation200 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity30--
SubcategoryTransistors--
Unit Weight0.238311 oz--
Manufacturer Part # Description RFQ
NJW1302G Bipolar Transistors - BJT 200W TO-3P PNP
NJW1302 NJW3281 New and Original
NJW1302G/3281G New and Original
NJW1302G/NJW3281G New and Original
ON Semiconductor
ON Semiconductor
NJW1302G Bipolar Transistors - BJT 200W TO-3P PNP
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