 | |  | |
| PartNumber | NSB1706DMW5T1G | NSB1706DMW5T1 | NSB1706DMW5T1/U6X |
| Description | Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN | Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | - |
| RoHS | Y | N | - |
| Configuration | Dual Common Emitter | Dual Common Emitter | - |
| Transistor Polarity | NPN | NPN | - |
| Typical Input Resistor | 4.7 kOhms | 4.7 kOhms | - |
| Typical Resistor Ratio | 0.1 | 0.1 | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SC-88A/SOT-353 | SC-88A/SOT-353 | - |
| DC Collector/Base Gain hfe Min | 80, 200 | 80 | - |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | - |
| Continuous Collector Current | 0.1 A | 0.1 A | - |
| Peak DC Collector Current | 100 mA | 100 mA | - |
| Pd Power Dissipation | 187 mW | 187 mW | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | NSB1706DMW5 | - | - |
| Packaging | Reel | Reel | - |
| DC Current Gain hFE Max | 80 | 80 | - |
| Height | 1 mm | 1 mm | - |
| Length | 2.2 mm | 2.2 mm | - |
| Width | 1.35 mm | 1.35 mm | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| NSB1706DMW5T1G | Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN | ||
| NSB1706DMW5T1/U6X | New and Original | ||
ON Semiconductor |
NSB1706DMW5T1 | Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN | |
| NSB1706DMW5T1 | TRANS 2NPN PREBIAS 0.25W SC70 | ||
| NSB1706DMW5T1G | Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN |