PartNumber | NSBA114TDP6T5G | NSBA114TDXV6T5G | NSBA114TDXV6T1G |
Description | Bipolar Transistors - Pre-Biased DUAL PBRT | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | Y | Y |
Series | NSBA114TDP6 | NSBA114TDXV6 | NSBA114TDXV6 |
Packaging | Reel | Reel | Reel |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 8000 | 8000 | 4000 |
Subcategory | Transistors | Transistors | Transistors |
Configuration | - | Dual | Dual |
Transistor Polarity | - | PNP | PNP |
Typical Input Resistor | - | 10 kOhms | 10 kOhms |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | SOT-563-6 | SOT-563-6 |
DC Collector/Base Gain hfe Min | - | 160 | 160 |
Collector Emitter Voltage VCEO Max | - | 50 V | 50 V |
Continuous Collector Current | - | - 0.1 A | - 0.1 A |
Peak DC Collector Current | - | 100 mA | 100 mA |
Pd Power Dissipation | - | 357 mW | 357 mW |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
DC Current Gain hFE Max | - | 160 | 160 |
Height | - | 0.55 mm | 0.55 mm |
Length | - | 1.6 mm | 1.6 mm |
Width | - | 1.2 mm | 1.2 mm |
Unit Weight | - | 0.000106 oz | 0.000106 oz |