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| PartNumber | NSBA115EDXV6T1G | NSBA115TDP6T5G | NSBA115EDXV6T1 |
| Description | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP | Bipolar Transistors - Pre-Biased DUAL PBRT | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Transistors (BJT) - Arrays, Pre-Biased |
| RoHS | Y | Y | - |
| Configuration | Dual | - | Dual |
| Transistor Polarity | PNP | - | PNP |
| Typical Input Resistor | 100 kOhms | - | 100 kOhms |
| Typical Resistor Ratio | 1 | - | 1 |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | SOT-563-6 | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | - 0.1 A | - | - 0.1 A |
| Peak DC Collector Current | 100 mA | - | 100 mA |
| Pd Power Dissipation | 357 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Series | NSBA115EDXV6 | NSBA115TDP6 | NSBA115EDXV6 |
| Packaging | Reel | Reel | Cut Tape (CT) Alternate Packaging |
| DC Current Gain hFE Max | 80 | - | - |
| Height | 0.55 mm | - | - |
| Length | 1.6 mm | - | - |
| Width | 1.2 mm | - | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 4000 | 8000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.000106 oz | - | 0.000289 oz |
| Package Case | - | - | SOT-563, SOT-666 |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-563 |
| Power Max | - | - | 500mW |
| Transistor Type | - | - | 2 PNP - Pre-Biased (Dual) |
| Current Collector Ic Max | - | - | 100mA |
| Voltage Collector Emitter Breakdown Max | - | - | 50V |
| Resistor Base R1 Ohms | - | - | 100k |
| Resistor Emitter Base R2 Ohms | - | - | 100k |
| DC Current Gain hFE Min Ic Vce | - | - | 80 @ 5mA, 10V |
| Vce Saturation Max Ib Ic | - | - | 250mV @ 300μA, 10mA |
| Current Collector Cutoff Max | - | - | 500nA |
| Frequency Transition | - | - | - |
| Pd Power Dissipation | - | - | 357 mW |
| Collector Emitter Voltage VCEO Max | - | - | 50 V |
| DC Collector Base Gain hfe Min | - | - | 80 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| NSBA115EDXV6T1G | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP | ||
| NSBA115TDP6T5G | Bipolar Transistors - Pre-Biased DUAL PBRT | ||
| NSBA115TF3T5G | Bipolar Transistors - Pre-Biased SOT-1123 PBRT TRANSISTOR | ||
| NSBA115EDXV6T1 | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP | ||
ON Semiconductor |
NSBA115TDP6T5G | Bipolar Transistors - Pre-Biased DUAL PBRT | |
| NSBA115TF3T5G | Bipolar Transistors - Pre-Biased SOT-1123 PBRT TRANSISTOR | ||
| NSBA115EDXV6T1G | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP |