PartNumber | NSBA123EDXV6T1G | NSBA123EF3T5G | NSBA123EDXV6T1 |
Description | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP | Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR (B | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
RoHS | Y | Y | N |
Configuration | Dual | - | Dual |
Transistor Polarity | PNP | - | PNP |
Typical Input Resistor | 2.2 kOhms | - | 2.2 kOhms |
Typical Resistor Ratio | 1 | - | 1 |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SOT-563-6 | - | SOT-563-6 |
DC Collector/Base Gain hfe Min | 8 | - | 8 |
Collector Emitter Voltage VCEO Max | 50 V | - | 50 V |
Continuous Collector Current | - 0.1 A | - | - 0.1 A |
Peak DC Collector Current | 100 mA | - | 100 mA |
Pd Power Dissipation | 357 mW | - | 357 mW |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Series | NSBA123EDXV6 | NSBA123EF3 | - |
Packaging | Reel | Reel | Reel |
DC Current Gain hFE Max | 8 | - | 8 |
Height | 0.55 mm | - | 0.55 mm |
Length | 1.6 mm | - | 1.6 mm |
Width | 1.2 mm | - | 1.2 mm |
Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
Factory Pack Quantity | 4000 | 8000 | - |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.000106 oz | - | 0.000106 oz |