NSBA123E

NSBA123EDXV6T1G vs NSBA123EF3T5G vs NSBA123EDXV6T1

 
PartNumberNSBA123EDXV6T1GNSBA123EF3T5GNSBA123EDXV6T1
DescriptionBipolar Transistors - Pre-Biased 100mA 50V Dual PNPBipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR (BBipolar Transistors - Pre-Biased 100mA 50V Dual PNP
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased
RoHSYYN
ConfigurationDual-Dual
Transistor PolarityPNP-PNP
Typical Input Resistor2.2 kOhms-2.2 kOhms
Typical Resistor Ratio1-1
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-563-6-SOT-563-6
DC Collector/Base Gain hfe Min8-8
Collector Emitter Voltage VCEO Max50 V-50 V
Continuous Collector Current- 0.1 A-- 0.1 A
Peak DC Collector Current100 mA-100 mA
Pd Power Dissipation357 mW-357 mW
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesNSBA123EDXV6NSBA123EF3-
PackagingReelReelReel
DC Current Gain hFE Max8-8
Height0.55 mm-0.55 mm
Length1.6 mm-1.6 mm
Width1.2 mm-1.2 mm
BrandON SemiconductorON SemiconductorON Semiconductor
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity40008000-
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.000106 oz-0.000106 oz
Manufacturer Part # Description RFQ
NSBA123EDXV6T1G Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA123EF3T5G Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR (B
ON Semiconductor
ON Semiconductor
NSBA123EDXV6T1 Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP
NSBA123EDXV6T1 TRANS 2PNP PREBIAS 0.5W SOT563
NSBA123EDXV6T1G TRANS 2PNP PREBIAS 0.5W SOT563
NSBA123EF3T5G Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR (B
Top