PartNumber | NSBA123JDXV6T5G | NSBA123JDP6T5G | NSBA123JDXV6T5 |
Description | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP | Bipolar Transistors - Pre-Biased DUAL PBRT | Bipolar Transistors - Pre-Biased 100mA 50V Dual PNP |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | - |
RoHS | Y | Y | - |
Configuration | Dual | - | - |
Transistor Polarity | PNP | - | - |
Typical Input Resistor | 2.2 kOhms | - | - |
Typical Resistor Ratio | 0.047 | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-563-6 | - | - |
DC Collector/Base Gain hfe Min | 80 | - | - |
Collector Emitter Voltage VCEO Max | 50 V | - | - |
Continuous Collector Current | - 0.1 A | - | - |
Peak DC Collector Current | 100 mA | - | - |
Pd Power Dissipation | 357 mW | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | NSBA123JDXV6 | NSBA123JDP6 | - |
Packaging | Reel | Reel | - |
DC Current Gain hFE Max | 80 | - | - |
Height | 0.55 mm | - | - |
Length | 1.6 mm | - | - |
Width | 1.2 mm | - | - |
Brand | ON Semiconductor | ON Semiconductor | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
Factory Pack Quantity | 8000 | 8000 | - |
Subcategory | Transistors | Transistors | - |
Unit Weight | 0.000106 oz | - | - |