NSBC114EDXV6T1

NSBC114EDXV6T1G vs NSBC114EDXV6T1 vs NSBC114EDXV6T1/7AX

 
PartNumberNSBC114EDXV6T1GNSBC114EDXV6T1NSBC114EDXV6T1/7AX
DescriptionBipolar Transistors - Pre-Biased 100mA 50V Dual NPNTRANS 2NPN PREBIAS 0.5W SOT563
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - Pre-BiasedTransistors (BJT) - Arrays, Pre-Biased-
RoHSY--
ConfigurationDual--
Transistor PolarityNPN--
Typical Input Resistor10 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSOT-563-6--
DC Collector/Base Gain hfe Min35--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation357 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesNSBC114EDXV6--
PackagingReelCut Tape (CT)-
DC Current Gain hFE Max35--
Height0.55 mm--
Length1.6 mm--
Width1.2 mm--
BrandON Semiconductor--
Maximum DC Collector Current100 mA--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity4000--
SubcategoryTransistors--
Unit Weight0.000106 oz--
Package Case-SOT-563, SOT-666-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-563-
Power Max-500mW-
Transistor Type-2 NPN - Pre-Biased (Dual)-
Current Collector Ic Max-100mA-
Voltage Collector Emitter Breakdown Max-50V-
Resistor Base R1 Ohms-10k-
Resistor Emitter Base R2 Ohms-10k-
DC Current Gain hFE Min Ic Vce-35 @ 5mA, 10V-
Vce Saturation Max Ib Ic-250mV @ 300μA, 10mA-
Current Collector Cutoff Max-500nA-
Frequency Transition---
Manufacturer Part # Description RFQ
NSBC114EDXV6T1G Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
NSBC114EDXV6T1/7AX New and Original
NSBC114EDXV6T1G , FDH411 New and Original
ON Semiconductor
ON Semiconductor
NSBC114EDXV6T1 TRANS 2NPN PREBIAS 0.5W SOT563
NSBC114EDXV6T1G Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
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