 |  | ||
| PartNumber | NSBC114EPDXV6T1G | NSBC114EPDXV6T1 | NSBC114EPDXV6T5 |
| Description | Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP | TRANS PREBIAS NPN/PNP SOT563 | Bipolar Transistors - Pre-Biased 100mA Complementary |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| RoHS | Y | - | - |
| Configuration | Dual | - | - |
| Transistor Polarity | PNP | - | - |
| Typical Input Resistor | 10 kOhms | - | - |
| Typical Resistor Ratio | 1 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-563-6 | - | - |
| DC Collector/Base Gain hfe Min | 35 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 0.1 A | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 357 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | NSBC114EPDXV6 | - | - |
| Packaging | Reel | - | - |
| DC Current Gain hFE Max | 35 | - | - |
| Height | 0.55 mm | - | - |
| Length | 1.6 mm | - | - |
| Width | 1.2 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000106 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| NSBC114EPDXV6T5G | Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP | ||
| NSBC114EPDXV6T1G | Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP | ||
| NSBC114EPDXV6T5 | Bipolar Transistors - Pre-Biased 100mA Complementary | ||
ON Semiconductor |
NSBC114EPDXV6T1 | TRANS PREBIAS NPN/PNP SOT563 | |
| NSBC114EPDXV6T5G | Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP | ||
| NSBC114EPDXV6T1G | Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP |