NSBC114YDX

NSBC114YDXV6T1G vs NSBC114YDXV6T1 , FDH444T vs NSBC114YDXV6T1/7DX

 
PartNumberNSBC114YDXV6T1GNSBC114YDXV6T1 , FDH444TNSBC114YDXV6T1/7DX
DescriptionBipolar Transistors - Pre-Biased 100mA 50V Dual NPN
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationDual--
Transistor PolarityNPN--
Typical Input Resistor10 kOhms--
Typical Resistor Ratio0.21--
Mounting StyleSMD/SMT--
Package / CaseSOT-563-6--
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation357 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesNSBC114YDXV6--
PackagingReel--
DC Current Gain hFE Max80--
Height0.55 mm--
Length1.6 mm--
Width1.2 mm--
BrandON Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity4000--
SubcategoryTransistors--
Unit Weight0.000106 oz--
Manufacturer Part # Description RFQ
NSBC114YDXV6T5G Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
NSBC114YDXV6T1G Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
NSBC114YDXV6T1 , FDH444T New and Original
NSBC114YDXV6T1/7DX New and Original
NSBC114YDXV6TI New and Original
ON Semiconductor
ON Semiconductor
NSBC114YDXV6T1 Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
NSBC114YDXV6T1 TRANS 2NPN PREBIAS 0.5W SOT563
NSBC114YDXV6T5G Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
NSBC114YDXV6T1G Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN
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