PartNumber | NSBC123JDP6T5G | NSBC123JDXV6T1G | NSBC123JDXV6T |
Description | Bipolar Transistors - Pre-Biased DUAL NBRT | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | - |
RoHS | Y | Y | - |
Series | NSBC123JDP6 | NSBC123JDXV6 | - |
Packaging | Reel | Reel | - |
Brand | ON Semiconductor | ON Semiconductor | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
Factory Pack Quantity | 8000 | 4000 | - |
Subcategory | Transistors | Transistors | - |
Configuration | - | Dual | - |
Transistor Polarity | - | NPN | - |
Typical Input Resistor | - | 2.2 kOhms | - |
Typical Resistor Ratio | - | 0.047 | - |
Mounting Style | - | SMD/SMT | - |
Package / Case | - | SOT-563-6 | - |
DC Collector/Base Gain hfe Min | - | 80 | - |
Collector Emitter Voltage VCEO Max | - | 50 V | - |
Continuous Collector Current | - | 0.1 A | - |
Peak DC Collector Current | - | 100 mA | - |
Pd Power Dissipation | - | 357 mW | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
DC Current Gain hFE Max | - | 80 | - |
Height | - | 0.55 mm | - |
Length | - | 1.6 mm | - |
Width | - | 1.2 mm | - |
Unit Weight | - | 0.000106 oz | - |