NSS1C2

NSS1C200LT1G vs NSS1C200 vs NSS1C200LT1G-CUT TAPE

 
PartNumberNSS1C200LT1GNSS1C200NSS1C200LT1G-CUT TAPE
DescriptionBipolar Transistors - BJT 100V LO VCE(SAT) TRA PNP
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max100 V--
Collector Base Voltage VCBO140 V--
Emitter Base Voltage VEBO7 V--
Maximum DC Collector Current2 A--
Gain Bandwidth Product fT120 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesNSS1C200L--
DC Current Gain hFE Max150--
Height0.94 mm--
Length2.9 mm--
PackagingReel--
Width1.3 mm--
BrandON Semiconductor--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation710 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Manufacturer Part # Description RFQ
NSS1C200MZ4T3G Bipolar Transistors - BJT PNP BIP POWER TRAN SOT223
NSS1C200LT1G Bipolar Transistors - BJT 100V LO VCE(SAT) TRA PNP
NSS1C200MZ4T1G Bipolar Transistors - BJT PNP SOT223 BIP POWER TRAN
NSS1C201MZ4T3G Bipolar Transistors - BJT 100V LO VCE(SAT) TRA NPN
NSS1C201LT1G Bipolar Transistors - BJT NPN 100V LOW V-SAT SOT23
NSS1C201MZ4T1G Bipolar Transistors - BJT 100V, NPN Low VCE Trans.
NSS1C200 New and Original
NSS1C200MZT1G New and Original
NSS1C201MZ New and Original
NSS1C2OOLT1G New and Original
NSS1C200LT1G-CUT TAPE New and Original
NSS1C201MZ4T1G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
NSS1C200MZ4T3G Bipolar Transistors - BJT PNP BIP POWER TRAN SOT223
NSS1C200MZ4T1G Bipolar Transistors - BJT PNP SOT223 BIP POWER TRAN
NSS1C201LT1G Bipolar Transistors - BJT NPN 100V LOW V-SAT SOT23
NSS1C200LT1G Bipolar Transistors - BJT 100V LO VCE(SAT) TRA PNP
NSS1C201MZ4T1G Bipolar Transistors - BJT 100V, NPN Low VCE Trans.
NSS1C201MZ4T3G Bipolar Transistors - BJT 100V LO VCE(SAT) TRA NPN
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