PartNumber | NSS20101JT1G | NSS200-50 | NSS20101ST1G |
Description | Bipolar Transistors - BJT 20V NPN LOW VCE(SAT) | ||
Manufacturer | ON Semiconductor | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SC-89-3 | - | - |
Transistor Polarity | NPN | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 20 V | - | - |
Collector Base Voltage VCBO | 40 V | - | - |
Emitter Base Voltage VEBO | 6 V | - | - |
Maximum DC Collector Current | 2 A | - | - |
Gain Bandwidth Product fT | 350 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | NSS20101J | - | - |
Height | 0.7 mm | - | - |
Length | 1.6 mm | - | - |
Packaging | Reel | - | - |
Width | 0.85 mm | - | - |
Brand | ON Semiconductor | - | - |
Pd Power Dissipation | 300 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.000095 oz | - | - |