NSS3010

NSS30101LT1G vs NSS30100LT1G

 
PartNumberNSS30101LT1GNSS30100LT1G
DescriptionBipolar Transistors - BJT 1A 30V Low VCEsatBipolar Transistors - BJT 2A 30V Low VCEsat
ManufacturerON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYY
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3
Transistor PolarityNPNPNP
ConfigurationSingleSingle
Collector Emitter Voltage VCEO Max30 V- 30 V
Collector Base Voltage VCBO50 V- 50 V
Emitter Base Voltage VEBO5 V5 V
Collector Emitter Saturation Voltage0.2 V- 0.65 V
Maximum DC Collector Current1 A1 A
Gain Bandwidth Product fT100 MHz100 MHz
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
SeriesNSS30101LT1GNSS30100LT1G
Height0.94 mm0.94 mm
Length2.9 mm2.9 mm
PackagingReelReel
Width1.3 mm1.3 mm
BrandON SemiconductorON Semiconductor
Continuous Collector Current1 A- 1 A
DC Collector/Base Gain hfe Min300-
Pd Power Dissipation310 mW310 mW
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity30003000
SubcategoryTransistorsTransistors
Unit Weight0.000282 oz0.000282 oz
Manufacturer Part # Description RFQ
ON Semiconductor
ON Semiconductor
NSS30101LT1G Bipolar Transistors - BJT 1A 30V Low VCEsat
NSS30100LT1G Bipolar Transistors - BJT 2A 30V Low VCEsat
NSS30101LT1G Bipolar Transistors - BJT 1A 30V Low VCEsat
NSS30100LT1G Bipolar Transistors - BJT 2A 30V Low VCEsat
NSS30100LT1G , FHD184 New and Original
NSS30101LT1G 882 New and Original
NSS30101LT1GG New and Original
NSS3010LT1G New and Original
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