NSS35200C

NSS35200CF8T1G vs NSS35200CF8T1 vs NSS35200CF8TIG

 
PartNumberNSS35200CF8T1GNSS35200CF8T1NSS35200CF8TIG
DescriptionBipolar Transistors - BJT 2A 35V Low VCEsat35V PNP LOW VCE(SAT)
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / Case1206A--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 35 V--
Collector Base Voltage VCBO- 55 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage- 0.3 V--
Maximum DC Collector Current2 A--
Gain Bandwidth Product fT100 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesNSS35200CF8T1G--
Height1.05 mm--
Length3.05 mm--
PackagingReel--
Width1.65 mm--
BrandON Semiconductor--
Continuous Collector Current- 2 A--
Pd Power Dissipation635 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Manufacturer Part # Description RFQ
NSS35200CF8T1G Bipolar Transistors - BJT 2A 35V Low VCEsat
NSS35200CF8T1 New and Original
NSS35200CF8TIG 35V PNP LOW VCE(SAT)
ON Semiconductor
ON Semiconductor
NSS35200CF8T1G New and Original
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