 |  | | |
| PartNumber | NSS35200MR6T1G | NSS35200MR6T | NSS35200MR6T16 |
| Description | Bipolar Transistors - BJT 2A 35V Low VCEsat | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSOP-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 35 V | - | - |
| Collector Base Voltage VCBO | - 55 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | - 0.26 V | - | - |
| Maximum DC Collector Current | 2 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | NSS35200MR6T1G | - | - |
| Height | 0.94 mm | - | - |
| Length | 3 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.5 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | - 2 A | - | - |
| Pd Power Dissipation | 625 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000705 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| NSS35200MR6T1G | Bipolar Transistors - BJT 2A 35V Low VCEsat | ||
| NSS35200MR6T | New and Original | ||
| NSS35200MR6T16 | New and Original | ||
ON Semiconductor |
NSS35200MR6T1G | New and Original |