PartNumber | NSS60200LT1G | NSS60200DMTTBG | NSS60200LT1G-CUT TAPE |
Description | Bipolar Transistors - BJT LO V PNP TRANSISTOR 60V 4.0A | Bipolar Transistors - BJT DUAL 60V 2A LOWVCES AT PNP | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
RoHS | Y | Y | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-23-3 | WDFN-6 | - |
Transistor Polarity | PNP | PNP | - |
Configuration | Single | Dual | - |
Collector Emitter Voltage VCEO Max | 60 V | - 60 V | - |
Collector Base Voltage VCBO | 80 V | - 60 V | - |
Emitter Base Voltage VEBO | 7 V | - 6 V | - |
Maximum DC Collector Current | 2 A | - | - |
Gain Bandwidth Product fT | 100 MHz | 155 MHz | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | NSS60200LT1G | - | - |
Height | 0.94 mm | - | - |
Length | 2.9 mm | - | - |
Packaging | Reel | Reel | - |
Width | 1.3 mm | - | - |
Brand | ON Semiconductor | ON Semiconductor | - |
DC Collector/Base Gain hfe Min | 150 | 150 | - |
Pd Power Dissipation | 540 mW | 1.8 W | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | Transistors | Transistors | - |
Unit Weight | 0.000282 oz | - | - |
Collector Emitter Saturation Voltage | - | - 0.365 V | - |
DC Current Gain hFE Max | - | 230 | - |
Continuous Collector Current | - | 2 A | - |
Qualification | - | AEC-Q101 | - |