NSS602

NSS60200LT1G vs NSS60200DMTTBG vs NSS60200LT1G-CUT TAPE

 
PartNumberNSS60200LT1GNSS60200DMTTBGNSS60200LT1G-CUT TAPE
DescriptionBipolar Transistors - BJT LO V PNP TRANSISTOR 60V 4.0ABipolar Transistors - BJT DUAL 60V 2A LOWVCES AT PNP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3WDFN-6-
Transistor PolarityPNPPNP-
ConfigurationSingleDual-
Collector Emitter Voltage VCEO Max60 V- 60 V-
Collector Base Voltage VCBO80 V- 60 V-
Emitter Base Voltage VEBO7 V- 6 V-
Maximum DC Collector Current2 A--
Gain Bandwidth Product fT100 MHz155 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesNSS60200LT1G--
Height0.94 mm--
Length2.9 mm--
PackagingReelReel-
Width1.3 mm--
BrandON SemiconductorON Semiconductor-
DC Collector/Base Gain hfe Min150150-
Pd Power Dissipation540 mW1.8 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000282 oz--
Collector Emitter Saturation Voltage-- 0.365 V-
DC Current Gain hFE Max-230-
Continuous Collector Current-2 A-
Qualification-AEC-Q101-
Manufacturer Part # Description RFQ
NSS60201LT1G Bipolar Transistors - BJT 60V NPN LOW VCE(SAT) XTR
NSS60200LT1G Bipolar Transistors - BJT LO V PNP TRANSISTOR 60V 4.0A
NSS60200SMTTBG Bipolar Transistors - BJT 60V SINGLE 2A LOWVC E(SAT)
NSS60201SMTTBG Bipolar Transistors - BJT 60V SINGLE 2A LOWVC E(SAT)
NSS60200DMTTBG Bipolar Transistors - BJT DUAL 60V 2A LOWVCES AT PNP
NSS60201LT1G , FHRA102-M New and Original
NSS60201T1G New and Original
NSS60200LT1G-CUT TAPE New and Original
NSS60201LT1G-CUT TAPE New and Original
ON Semiconductor
ON Semiconductor
NSS60201LT1G New and Original
NSS60200LT1G Bipolar Transistors - BJT LO V PNP TRANSISTOR 60V 4.0A
Top