 |  |  | |
| PartNumber | NSV1C200MZ4T1G | NSV1C200LT1G | NSV1C201L |
| Description | Bipolar Transistors - BJT PNP SOT223 BIP POWER TRAN | Bipolar Transistors - BJT 100V PNP LOW VCE(SAT) TRA | |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors (BJT) - Single, Pre-Biased |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-223-4 | SOT-23-3 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | - 100 V | - 100 V | - |
| Collector Base Voltage VCBO | - 140 V | - 140 V | - |
| Emitter Base Voltage VEBO | - 7 V | - 7 V | - |
| Collector Emitter Saturation Voltage | - 0.22 V | - 950 mV | - |
| Maximum DC Collector Current | 3 A | - 3 A | - |
| Gain Bandwidth Product fT | 120 MHz | 120 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | NSS1C200 | NSS1C200L | NSS1C201L |
| DC Current Gain hFE Max | 360 at - 500 mA, - 2 V | 360 at - 500 mA, - 2 V | - |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Brand | ON Semiconductor | ON Semiconductor | - |
| DC Collector/Base Gain hfe Min | 120 | 120 | - |
| Pd Power Dissipation | 2 W | 490 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 1000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.003951 oz | 0.000282 oz | - |
| Technology | - | Si | - |
| Continuous Collector Current | - | - 2 A | - |
| Package Case | - | - | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | SOT-23-3 (TO-236) |
| Power Max | - | - | 490mW |
| Transistor Type | - | - | NPN |
| Current Collector Ic Max | - | - | 2A |
| Voltage Collector Emitter Breakdown Max | - | - | 100V |
| DC Current Gain hFE Min Ic Vce | - | - | 120 @ 500mA, 2V |
| Vce Saturation Max Ib Ic | - | - | 150mV @ 200mA, 2A |
| Current Collector Cutoff Max | - | - | 100nA (ICBO) |
| Frequency Transition | - | - | 110MHz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
| NSV1C200MZ4T1G | Bipolar Transistors - BJT PNP SOT223 BIP POWER TRAN | ||
| NSV1C200LT1G | Bipolar Transistors - BJT 100V PNP LOW VCE(SAT) TRA | ||
| NSV1C201MZ4T1G | Bipolar Transistors - BJT 100V NPN LOW VCE(SAT) TRA | ||
| NSV1C201LT1G | Bipolar Transistors - BJT NPN 100V SOT23 LOW V-SAT | ||
| NSV1C201L | New and Original | ||
| NSV1C201M24 | New and Original | ||
ON Semiconductor |
NSV1C201LT1G | Bipolar Transistors - BJT NPN 100V SOT23 LOW V-SAT | |
| NSV1C200LT1G | Bipolar Transistors - BJT 100V PNP LOW VCE(SAT) TRA | ||
| NSV1C201MZ4T1G | Bipolar Transistors - BJT 100V NPN LOW VCE(SAT) TRA | ||
| NSV1C200MZ4T1G | Bipolar Transistors - BJT PNP SOT223 BIP POWER TRAN |