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| PartNumber | NSV40200LT1G | NSV40201LT1G | NSV40200UW6T1G |
| Description | Bipolar Transistors - BJT LESHANBE (CN1) XTR | Bipolar Transistors - BJT 40V NPN LOW VCE(SAT) XTR | Bipolar Transistors - BJT WDFN6 2*2 LOW VCE(SAT) TR |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Transistor Polarity | PNP | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | - 40 V | 40 V | - |
| Collector Base Voltage VCBO | - 40 V | 40 V | - |
| Emitter Base Voltage VEBO | - 7 V | 6 V | - |
| Collector Emitter Saturation Voltage | - 0.135 V | 6 mV | - |
| Maximum DC Collector Current | - 4 A | 6 A | - |
| Gain Bandwidth Product fT | 100 MHz | 150 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | NSS40200L | NSS40201L | NSS40200UW6T1G |
| Packaging | Reel | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| DC Collector/Base Gain hfe Min | 250 at - 10 mA, - 2 V | 200 at 500 mA, 2 V | - |
| Pd Power Dissipation | 710 mW | 460 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |
| DC Current Gain hFE Max | - | 370 at 500 mA, 2 V | - |
| Continuous Collector Current | - | 2 A | - |